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characteristics of LCEM/STON heterojunction measured by tuning bias currents. The inset of (a) shows a schematic illustration of electrode setting. The insets of (b) and (c) present curves at temperatures of 250 and , respectively.
Magnetoresistance of the LCEM/STON junction measured under a field of and at selected currents , 0, . The inset displays the MR of LCEM/STON junction as a function of bias currents under a field of and at the selected temperature of .
Magnetoresistance of the LCEM/STON junction as a function of magnetic field at the selected current .
Temperature dependence of diffusion voltage and breakdown voltage of the LCEM/STON junction.
Schematic diagrams for the band structure of LCEM and STON at (a) and (b) .
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