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Scheme of the ALILE process: (1) Si diffusion across the membrane (thick line) into the Al layer, (2) Si diffusion within the Al layer, (3) Si nucleation, (4) Si grain growth, and (5) Al diffusion across the membrane into the layer.
Nominal annealing temperature vs annealing time . The sample has been annealed at for , cooled down to within and reheated to for .
Optical micrographs before (a) and after (b) the cool down and reheating.
Schematic illustration of the silicon concentration in front of a growing grain vs distance from the grain before (a) and after (b) cool down. Critical concentration and saturation concentration are shown with the corresponding indices. The transition from the growth (1) to nucleation (2) regime at the depletion region width is indicated in (b).
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