1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si
Rent:
Rent this article for
USD
10.1063/1.1996849
/content/aip/journal/apl/87/3/10.1063/1.1996849
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1996849
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scheme of the ALILE process: (1) Si diffusion across the membrane (thick line) into the Al layer, (2) Si diffusion within the Al layer, (3) Si nucleation, (4) Si grain growth, and (5) Al diffusion across the membrane into the layer.

Image of FIG. 2.
FIG. 2.

Nominal annealing temperature vs annealing time . The sample has been annealed at for , cooled down to within and reheated to for .

Image of FIG. 3.
FIG. 3.

Optical micrographs before (a) and after (b) the cool down and reheating.

Image of FIG. 4.
FIG. 4.

Schematic illustration of the silicon concentration in front of a growing grain vs distance from the grain before (a) and after (b) cool down. Critical concentration and saturation concentration are shown with the corresponding indices. The transition from the growth (1) to nucleation (2) regime at the depletion region width is indicated in (b).

Loading

Article metrics loading...

/content/aip/journal/apl/87/3/10.1063/1.1996849
2005-07-12
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1996849
10.1063/1.1996849
SEARCH_EXPAND_ITEM