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(Color online) Calculated Si/ DBR reflectivity with air ambient (external reflector) and semiconductor ambient (internal reflector) vs angle.
(Color online) (a), Schematic of internal ODR with high-index ambient (GaP) and nanoporous as low- material. Total internal reflection region and 1D photonic crystal ( / ) reflection region are indicated. Brewster angle is beyond the maximum angle of the light distribution inside the / multilayer stack. (b) Angular dependent evanescent wave intensity and decay constant inside low- material, (c) Atomic force micrograph of a nanoporous after annealing at 550 °C.
(Color online) One-dimensional photonic band structure of / multilayer stack. Dark area is propagating states and white area is evanescent states. With ambient index , light line is , indicating existence of omni band.
(Color online) Angular and spectral dependence of measured and calculated reflectivity for internal ODR. The calculated angle-averaged reflectivity is for both the TE and TM polarization.
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