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Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth
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View: Figures


Image of FIG. 1.
FIG. 1.

The reduction of and the enhancement of arsenic active dose derived on basis of and Hall mobility measurements of identically doped junctions, As 5 keV, , activated with various ramp-up rates in the range between 36 and , where the actual annealing was done at 700 °C spike SPER.

Image of FIG. 2.
FIG. 2.

of arsenic doped junctions with 5 keV and doses , , and , preannealed at 480 °C and activated by spike SPER at 700 °C.

Image of FIG. 3.
FIG. 3.

SIMS of arsenic activated at 700 °C spike SPER implanted with 5 keV and doses , , and . For the highest dose the excess arsenic concentration at the depth of 5–10 nm should be responsible for the increment in and the strong preanneal effect on dopant activation. The vertical line is the amorphous silicon thickness. In the inset of the figure the vs implanted dose dependence is presented.

Image of FIG. 4.
FIG. 4.

Correlation of active arsenic dose vs amount of substitutional arsenic—as we learn from RBS-C experiments. The theoretical line indicates dopant activation if all substitutional arsenic is active. Data for activated As 5 keV, .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth