1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Quantitative copper measurement in oxidized -type silicon wafers using microwave photoconductivity decay
Rent:
Rent this article for
USD
10.1063/1.1999008
/content/aip/journal/apl/87/3/10.1063/1.1999008
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1999008
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured lifetime as a function of light illumination time and the fitted curves [Eq. (1)]. (a) The wafers have same amount of copper but different density of oxide precipitates (circles , triangles ). (b) The wafers have the same density of oxide precipitates but different amount of copper (circles , triangles , squares ).

Image of FIG. 2.
FIG. 2.

Correlation between copper concentration and light activated lifetime in three different groups of wafers, with varying density of oxide precipitates: Homogenized (circles), low BMD (triangles), and high BMD (squares). Open triangles represent the wafers measured by VPD-TXRF. Also shown are the fitted curves Eqs. (2a)–(2c). The wafer with lowest level of copper could not be accurately positioned to the axis as it is below the detection limit of TID and VPD-TXRF after indiffusion.

Image of FIG. 3.
FIG. 3.

Time constant of the defect formation as a function of copper concentration in three different groups of wafers, with varying density of oxide precipitates: Homogenized (circles), low BMD (triangles), and high BMD (squares). Also shown are the trend lines.

Loading

Article metrics loading...

/content/aip/journal/apl/87/3/10.1063/1.1999008
2005-07-15
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1999008
10.1063/1.1999008
SEARCH_EXPAND_ITEM