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Experimental setup: The contacted wafer is heated to temperature by a gold-plated heater. A square-wave-shaped reverse voltage is applied to modulate the width of the space-charge region. The implied change of the charge carrier density and thus infrared light emission per area is detected by the IR camera.
IR emission signal of laterally homogeneous -junctions with three different acceptor concentrations . An abrupt junction is assumed to fit the experimental data by Eq. (1) (solid lines).
(a) Lifetime mapping by microwave-detected photoconductance decay of a -type edge-defined film-fed grown wafer as measured at room temperature. The sample has no surface passivation. (b) Image of the doping concentration of the same sample as measured by the ICM technique at 60 °C. The applied reverse bias was switched between 0V and 5V at a frequency of 2.43 Hz. The doping concentration is homogeneous.
Measurement of the experimental NECD at 60 °C. Image averaging leads to a sensitivity of in a measurement period of 28 min. This sensitivity corresponds to an elementary charge density of at a lateral resolution of . The applied reverse bias was switched between 0V and 5V.
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