1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Atomistic study of GaN surface grown on Si(111)
Rent:
Rent this article for
USD
10.1063/1.2000332
/content/aip/journal/apl/87/3/10.1063/1.2000332
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000332
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns of GaN films deposited on Si(111), observed with an electron beam parallel to , displaying GaN{0001}- (a) and (b) faint patterns for the samples grown under condition A, (c) and (d) patterns for the samples grown under conditions B and E, and (e) , (f) , (g) , and (h) patterns for the samples grown under conditions C and D.

Image of FIG. 2.
FIG. 2.

STM images of the samples grown under conditions C and D. (a) Scan size showing reconstruction, (b) showing reconstruction, (c) showing reconstruction, and (d) and (e) showing reconstruction. Sample bias voltages are , , , , and , respectively.

Image of FIG. 3.
FIG. 3.

Typical STM images observed on the samples grown (a) under conditions B and E, and (b) under condition B. (a) Scan size showing the rough surface with relatively flat area indicated by an arrow, where small reconstructed domains are observed frequently, and (b) showing the fluid islands coexisting with the reconstructed areas. Sample bias voltages are and , respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/87/3/10.1063/1.2000332
2005-07-15
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomistic study of GaN surface grown on Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000332
10.1063/1.2000332
SEARCH_EXPAND_ITEM