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Enhanced carrier confinement in quantum dots by raising wetting layer state energy
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10.1063/1.2000335
/content/aip/journal/apl/87/3/10.1063/1.2000335
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000335
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra and growth direction band alignment of two CdTe QD samples.

Image of FIG. 2.
FIG. 2.

Integrated PL intensity of the samples shown in Fig. 1 as a function of temperature for below-barrier excitation. The curves are vertically shifted for clarity.

Image of FIG. 3.
FIG. 3.

Temperature-dependence of measured (datapoints) and calculated (curves) decay times for the samples shown in Fig. 1. The calculation includes recombination processes (dashed curve) or (i) to (iii) (full curves) from discrete and continuum states or only processes (i) without continuum (dotted curve).

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/content/aip/journal/apl/87/3/10.1063/1.2000335
2005-07-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced carrier confinement in quantum dots by raising wetting layer state energy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000335
10.1063/1.2000335
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