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Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation
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10.1063/1.2000336
/content/aip/journal/apl/87/3/10.1063/1.2000336
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000336
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Figures

Image of FIG. 1.
FIG. 1.

(a) Effect of different orientations of Si bulk on the energy valleys of Si band structure and their arrangement with respect to the shape of truncated QD’s. (b) Schematics of intravalley intraband transitions within Si QD’s. Only the ground state of each valley is occupied, and the transitions occur between this state and the excited ones. The possibility of intervalley transitions is disregarded.

Image of FIG. 2.
FIG. 2.

(Left axis) Intraband absorption coefficient of spherical QD’s with 3, 5, and of diameter and [010] orientation of crystalline bulk. (Right axis) Oscillator strengths of the most important transitions for each valley. Transitions within the , , and valleys are represented by the symbols square, circle, and triangle, respectively.

Image of FIG. 3.
FIG. 3.

(Left axis) Intraband absorption coefficient of a hemispherical QD with of diameter for [010], [110], and [111] orientations of crystalline bulk. (Right axis) Oscillator strengths of the most important transitions for each valley. Transitions within the , , and valleys are represented by the symbols square, circle, and triangle, respectively.

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/content/aip/journal/apl/87/3/10.1063/1.2000336
2005-07-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000336
10.1063/1.2000336
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