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Peak decomposition of Al core level of an Al-rich AlN thin film (a) and the TEM image of an Al-rich AlN film (b).
Double-sweeping characteristics of a MIS structure with Al-rich AlN film as the gate dielectric (a) and flatband voltage shift caused by the double sweeping (i.e., the sweepings of the voltage from and then from back to ) as a function of Al:N ratio (b).
Shifts in characteristics after an application of for (a) and after an application of for (b).
(a) as a function of charging time at ; and (b) as a function of negative voltage for various charging time.
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