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Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
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10.1063/1.2000337
/content/aip/journal/apl/87/3/10.1063/1.2000337
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000337
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Peak decomposition of Al core level of an Al-rich AlN thin film (a) and the TEM image of an Al-rich AlN film (b).

Image of FIG. 2.
FIG. 2.

Double-sweeping characteristics of a MIS structure with Al-rich AlN film as the gate dielectric (a) and flatband voltage shift caused by the double sweeping (i.e., the sweepings of the voltage from and then from back to ) as a function of Al:N ratio (b).

Image of FIG. 3.
FIG. 3.

Shifts in characteristics after an application of for (a) and after an application of for (b).

Image of FIG. 4.
FIG. 4.

(a) as a function of charging time at ; and (b) as a function of negative voltage for various charging time.

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/content/aip/journal/apl/87/3/10.1063/1.2000337
2005-07-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2000337
10.1063/1.2000337
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