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Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing
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10.1063/1.2001136
/content/aip/journal/apl/87/3/10.1063/1.2001136
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2001136
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of a thick PS layer as a function of the pressure during HWA. The HWA was done at 260 °C for 3 h.

Image of FIG. 2.
FIG. 2.

The external QE values of PL emission and the corresponding PL peak wavelengths of the PS samples represented in Fig. 1 as a function of the HWA pressure. Data at zero pressure represents an as-anodized sample with no HWA treatment.

Image of FIG. 3.
FIG. 3.

ESR signals of PS samples (1–4) treated by HWA (260 °C, 3 h) under different pressures. The result of an as-anodized PS sample (denoted by A) is also shown. All PS samples are thick self-supporting layers. Microwave frequency was 9.878 GHz.

Image of FIG. 4.
FIG. 4.

The PL peak intensities for PS layers shown in Fig. 3 as a function of the spin density obtained from ESR data. The sample notations are the same as those shown in Fig. 3. The corresponding factors obtained from the respective ESR data are also plotted.

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/content/aip/journal/apl/87/3/10.1063/1.2001136
2005-07-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.2001136
10.1063/1.2001136
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