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Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer
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10.1063/1.1999839
/content/aip/journal/apl/87/4/10.1063/1.1999839
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/4/10.1063/1.1999839
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Silicon map obtained by EFTEM from the layer annealed at 1100 ° C for in N2. (b) Oxygen map obtained by EFTEM from the same region of the sample.

Image of FIG. 2.
FIG. 2.

One-dimensional Si (dotted curve) and O (full line) intensity profiles from the EFTEM Si and O maps shown in Fig. 1(a) and 1(b), respectively.

Image of FIG. 3.
FIG. 3.

(a) Electron energy loss spectrum from the SRO layer annealed at 1100 ° C for (open circles). The full line is a fit to the experimental spectrum using the model discussed in the text. Dotted-dashed, dotted, and dashed curves are the contribution to the total energy loss intensity coming from the host, from the surface or interface modes, and from the Si nanoclusters, respectively. (b) Dot sized distribution referring to the core region of the layer.

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/content/aip/journal/apl/87/4/10.1063/1.1999839
2005-07-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/4/10.1063/1.1999839
10.1063/1.1999839
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