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Ballistic bit addressing in a magnetic memory cell array
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View: Figures


Image of FIG. 1.
FIG. 1.

Geometry of the magnetic cell. Before pulse application the magnetization M is oriented along the direction (easy axis). The pulses are applied along the in-plane hard axis (y direction). Two half select pulses add up to a full select pulse .

Image of FIG. 2.
FIG. 2.

(a) Precession period (black) during application of hard axis field steps vs step amplitude H. is plotted in gray. The arrow marks the conditions for ballistic bit addressing. (b), (c) components of vs time at the fields for ballistic bit addressing. Full select case: (b), half select case: (c). After 344 ps (arrow) M is reversed for the full select field in (b) and M is in its initial state for the half select field in (c).

Image of FIG. 3.
FIG. 3.

Ballistic bit addressing for vanishing damping and vanishing rise/fall time ; (a) half select (gray) and full select (black) pulses. ; (b) ballistic full select switching trajectory. (c) ballistic half select switching trajectory.

Image of FIG. 4.
FIG. 4.

Ballistic bit addressing for weak damping and realistic pulse parameters; and : (a) half select (gray) and full select (black) pulses. , The pulse duration is 345 ps; (b) full select switching trajectory. (c) half select switching trajectory.

Image of FIG. 5.
FIG. 5.

Reliability testing of ballistic bit addressing at 2 GHz data rate: (a) series of alternating full select / half select pulses at 2 GHz data rate. (b) simulated response of the easy axis component of the free layer magnetization (black line) to the pulses in (a).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ballistic bit addressing in a magnetic memory cell array