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characteristics and sheet electron concentration of a MOSH structure. Solid lines: MOSH structure; dashed lines: Schottky-gate heterostructure. The squares represent the electron concentration simulation. The amplitude for the measurements is . The characteristics are frequency independent in the range of to . shows the sheet concentration at the interface.
Schematic structure (the inset) and the band diagram of the MOSH structure at 0, , and bias applied to the metal electrode.
Mobility-concentration dependence for the MOSH structure at high positive bias.
MOSHFET threshold voltage and the critical voltage for the real-space transfer as a function of dielectric thickness. Solid lines: calculated. Symbols: measured on MOSHFETs with different dielectric thicknesses. The points corresponding to were measured on HFET devices from the same wafer.
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