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Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
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10.1063/1.2001745
/content/aip/journal/apl/87/4/10.1063/1.2001745
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/4/10.1063/1.2001745
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics and sheet electron concentration of a MOSH structure. Solid lines: MOSH structure; dashed lines: Schottky-gate heterostructure. The squares represent the electron concentration simulation. The amplitude for the measurements is . The characteristics are frequency independent in the range of to . shows the sheet concentration at the interface.

Image of FIG. 2.
FIG. 2.

Schematic structure (the inset) and the band diagram of the MOSH structure at 0, , and bias applied to the metal electrode.

Image of FIG. 3.
FIG. 3.

Mobility-concentration dependence for the MOSH structure at high positive bias.

Image of FIG. 4.
FIG. 4.

MOSHFET threshold voltage and the critical voltage for the real-space transfer as a function of dielectric thickness. Solid lines: calculated. Symbols: measured on MOSHFETs with different dielectric thicknesses. The points corresponding to were measured on HFET devices from the same wafer.

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/content/aip/journal/apl/87/4/10.1063/1.2001745
2005-07-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/4/10.1063/1.2001745
10.1063/1.2001745
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