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Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
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10.1063/1.1993747
/content/aip/journal/apl/87/5/10.1063/1.1993747
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.1993747
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Magnetoresistance mobility, , as a function of the gate length, , for (squares), (diamonds), (triangles), (stars), and (circles). Solid lines are fits to Eq. (2) Inset: the resistance of transistor as a function of the squared magnetic field for . Notice that in this case the magnetoresistance at 10 T is less than 1%.

Image of FIG. 2.
FIG. 2.

(a) Dependence of (squares) and magnetoresistance mobility for transistor (triangles) on ; (b) (squares); (triangles), and (circles) as a function of . The error bars of are of the dimension of the data points.

Image of FIG. 3.
FIG. 3.

Relative contribution of the ballistic limitation with respect to the pocket limitation, . Inset: dependence of on for (diamonds), (circles), and (triangles).

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/content/aip/journal/apl/87/5/10.1063/1.1993747
2005-07-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.1993747
10.1063/1.1993747
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