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Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
1.M. I. Dyakonov and M. S. Shur, in The 23rd International Conference on Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann, (World Scientific, Singapore, 1996), pp. 145–148.
3.Y. Taur, D. S. Zicherman, D. R. Lombardi, P. J. Restle, C. H. Hsu, H. I. Hanafi, M. R. Wordeman, B. Davari, and G. Shahidi, IEEE Electron Device Lett. 13, 267 (1992).
4.G. Ghibaudo, Electron. Lett. 24, 543 (1988).
7.A. C. Beer, Galvanomagnetic Effects in Semiconductors (Academic, New York, 1963).
8.It is assumed in the following that is not dependent on the magnetic field because, due to a heavy doping of the contacts, the electron mobility there is much smaller than in the channel.
9.Y. M. Meziani, J. Łusakowski, W. Knap, N. Dyakonova, F. Teppe, K. Romanjek, M. Ferrier, R. Clerc, G. Ghibaudo, F. Boeuf, and T. Skotnicki, J. Appl. Phys. 96, 5761 (2004).
10.M. S. Shur, Introduction to Electronic Devices (Wiley, New York, 1996).
11.This method of determination of the concentration is correct provided the mobility does not depend on . To decrease the error caused by the dependence of on , the linear fit was limited to the highest values of , for which the mobility approaches a maximum.
13.As discussed in Ref. 9, depending on the scattering mechanism, the magnetoresistance mobility may be smaller than the effective one by up to about 50%. This correction scales down , , and values only, leaving unchanged.
14.J. Saint Martin, A. Bournel, and P. Dollfus, IEEE Trans. Electron Devices 51, 1148 (2004).
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