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Aluminum arsenide cleaved-edge overgrown quantum wires
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color) Right: zero bias conductance of an AlAs quantum wire as a function of gate bias , at bath temperatures (blue) and 340 mK (red) for two different cooldowns. Left: the population of higher 1D subbands (3, 4, 5) can be observed in the differential conductance at upon applying a finite source-drain dc bias . Inset: a schematic of the sample. The protruding red cylinder represents the wire at the edge of the AlAs 2D system; yellow: AlGaAs; blue: doping layers; orange: top gate; green: cleavage plane. Basis vectors and are indicated.

Image of FIG. 2.
FIG. 2.

(Color) Compressive (a) and tensile (b) strain components in the plane. (c), (d) and band structure in the center of the well along the direction within the effective-mass approximation (distance is measured from the cleavage plane). In (c) only strain is included. In (d) both strain and electrostatics are computed. The energies and of the first and second 1D subbands as well as of the subband are indicated. is the Fermi level. The probability density for the first 1D state is indicated.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum arsenide cleaved-edge overgrown quantum wires