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Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
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10.1063/1.1997277
/content/aip/journal/apl/87/5/10.1063/1.1997277
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.1997277
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Panchromatic CL image at room temperature taken from a 52- 4H–SiC epilayer with stacking faults.

Image of FIG. 2.
FIG. 2.

Cross-sectional high-resolution TEM image of an in-grown stacking fault in a 4H–SiC epilayer.

Image of FIG. 3.
FIG. 3.

Typical forward characteristics of Ni Schottky barrier diodes with and without stacking faults on 4H–SiC epilayers.

Image of FIG. 4.
FIG. 4.

Breakdown voltage of Ni Schottky barrier diodes (a) with and (b) without stacking faults on 4H–SiC epilayers (donor concentration: ).

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/content/aip/journal/apl/87/5/10.1063/1.1997277
2005-07-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.1997277
10.1063/1.1997277
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