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Panchromatic CL image at room temperature taken from a 52- 4H–SiC epilayer with stacking faults.
Cross-sectional high-resolution TEM image of an in-grown stacking fault in a 4H–SiC epilayer.
Typical forward characteristics of Ni Schottky barrier diodes with and without stacking faults on 4H–SiC epilayers.
Breakdown voltage of Ni Schottky barrier diodes (a) with and (b) without stacking faults on 4H–SiC epilayers (donor concentration: ).
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