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Electrical switching behavior of magnetron-sputtered thin films with different thicknesses. The inset shows an example (the 350 nm-thick sample) of the quantitative analysis made using the derivative of the curve.
Selected SEM micrographs of the thin films with different thicknesses: (a) Cross section and (b) top view of a 350 nm-thick film, (c) top view of a 50 nm-thick film, and (d) top view of a -thick film.
Grazing-incidence XRD spectra of the thin films, acquired at room temperature, as a function of their thickness. The inset shows the variation of the average grain size with film thickness.
Cross plot showing the variation of the amplitude and sharpness of the SMT of the thin films as a function of their average grain size. Horizontal and vertical error bars represent uncertainty in grain size determination and statistical variation of SMT parameters, respectively.
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