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High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color) Schematic cross section of the Si(111) and SOI substrates before and after bonding. (a) The H–Si(111) substrate has a mesa etched around the edges and contact regions made through P implantation. (b) Within the SOI substrate, the gate and shield layers are created by a double B implantation which are represented by the two doped Si layers. RIE is then used to etch a mesa and a cavity. (c) A H–Si(111) FET, where both substrates [(a) and (b)] are contact bonded in vacuum. The blue arrows depict the electric field produced by the gate which is terminated at the shield layer except inside the vacuum cavity, where it induces a 2DES on the H–Si(111) surface.

Image of FIG. 2.
FIG. 2.

(Color) Diagram showing the assembly of an encapsulated vacuum H–Si(111) FET. (a) The SOI substrate has a mesa, shield contacts, and a cavity etched via RIE. (b) The H–Si(111) substrate with its mesa and four contacts. (c) Shows the H–Si(111) substrate (b) flipped over and bonded to the SOI. The conducting regions are then soldered with In and Au wires. (d)Top view of (c) the bonded H–Si(111) FET, where the H–Si(111) substrate is drawn to be transparent in order to show the alignment of the contacts with respect to the cavity.

Image of FIG. 3.
FIG. 3.

(Color) Hall measurements of the electron density and mobility vs gate voltage at . The red dashed line is a linear fit of the data. Inset: AFM image of a H–Si(111) surface after in sparged 40% solution.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces