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Growth and characterization of GaN PiN rectifiers on free-standing GaN
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10.1063/1.2001738
/content/aip/journal/apl/87/5/10.1063/1.2001738
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2001738
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRXRD (a) scans and (b) rocking curves of the (0002) reflection from diodes grown on sapphire and HVPE GaN.

Image of FIG. 2.
FIG. 2.

(Color) SIMS depth profiles for C, H, and O impurities as well as the Si dopant in heteroepitaxial (solid lines) and homoepitaxial (dashed lines) layers.

Image of FIG. 3.
FIG. 3.

curves of GaN PiN rectifiers grown and fabricated on sapphire and GaN substrates.

Image of FIG. 4.
FIG. 4.

Temperature-dependent characteristics of a representative homoepitaxial PiN rectifier.

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/content/aip/journal/apl/87/5/10.1063/1.2001738
2005-07-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of GaN PiN rectifiers on free-standing GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2001738
10.1063/1.2001738
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