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HRXRD (a) scans and (b) rocking curves of the (0002) reflection from diodes grown on sapphire and HVPE GaN.
(Color) SIMS depth profiles for C, H, and O impurities as well as the Si dopant in heteroepitaxial (solid lines) and homoepitaxial (dashed lines) layers.
curves of GaN PiN rectifiers grown and fabricated on sapphire and GaN substrates.
Temperature-dependent characteristics of a representative homoepitaxial PiN rectifier.
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