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Screening of external electric field by photoinduced carriers in Bragg multiple quantum wells
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10.1063/1.2001743
/content/aip/journal/apl/87/5/10.1063/1.2001743
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2001743
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electric field at the end of the structure vs applied bias for different carrier concentrations, . (Note that the slope of the lines corresponding to the regimes of low bias and saturated screening is very small and is hardly visible in the graph.)

Image of FIG. 2.
FIG. 2.

Electric field at the end of the structure vs optically induced carrier concentration for a different applied bias, .

Image of FIG. 3.
FIG. 3.

(Color online) The reflection spectra of the structure before (solid line) and after (dashed line) the injection of the carriers. The structure is assumed to satisfy the Bragg condition at the exciton frequency with no external field, . The carrier concentration is .

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/content/aip/journal/apl/87/5/10.1063/1.2001743
2005-07-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Screening of external electric field by photoinduced carriers in Bragg multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2001743
10.1063/1.2001743
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