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Electric field at the end of the structure vs applied bias for different carrier concentrations, . (Note that the slope of the lines corresponding to the regimes of low bias and saturated screening is very small and is hardly visible in the graph.)
Electric field at the end of the structure vs optically induced carrier concentration for a different applied bias, .
(Color online) The reflection spectra of the structure before (solid line) and after (dashed line) the injection of the carriers. The structure is assumed to satisfy the Bragg condition at the exciton frequency with no external field, . The carrier concentration is .
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