Full text loading...
Cross-sectional HRTEM images of as-grown films deposited on a Si substrate by (a) RPALD and (b) DPALD at a deposition temperature of 250 °C using precursor.
XPS spectra of as-grown RPALD and DPALD films: (a) Hf spectra and (b) Si spectra of as-grown RPALD and DPALD film at 50 cycles at the plasma power of 100 W.
MEIS results for as-grown DPALD (left) and RPALD (right) films: open circles and solid lines represent raw data and fitted data, respectively. The inset shows the calculated relative concentration in the depth direction of the films from the fitting results.
Capacitance-voltage curves for as-grown and annealed films deposited by RPALD and DPALD.
Summary of the electrical properties of films deposited by the RPALD and DPALD methods.
Article metrics loading...