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Characteristics of thin films grown by plasma atomic layer deposition
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10.1063/1.2005370
/content/aip/journal/apl/87/5/10.1063/1.2005370
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2005370

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM images of as-grown films deposited on a Si substrate by (a) RPALD and (b) DPALD at a deposition temperature of 250 °C using precursor.

Image of FIG. 2.
FIG. 2.

XPS spectra of as-grown RPALD and DPALD films: (a) Hf spectra and (b) Si spectra of as-grown RPALD and DPALD film at 50 cycles at the plasma power of 100 W.

Image of FIG. 3.
FIG. 3.

MEIS results for as-grown DPALD (left) and RPALD (right) films: open circles and solid lines represent raw data and fitted data, respectively. The inset shows the calculated relative concentration in the depth direction of the films from the fitting results.

Image of FIG. 4.
FIG. 4.

Capacitance-voltage curves for as-grown and annealed films deposited by RPALD and DPALD.

Tables

Generic image for table
Table I.

Summary of the electrical properties of films deposited by the RPALD and DPALD methods.

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/content/aip/journal/apl/87/5/10.1063/1.2005370
2005-07-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of HfO2 thin films grown by plasma atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2005370
10.1063/1.2005370
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