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Well-defined excited states of self-assembled quantum dots on InP (001)
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10.1063/1.2005385
/content/aip/journal/apl/87/5/10.1063/1.2005385
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2005385
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram for the alternate growth method.

Image of FIG. 2.
FIG. 2.

(a) XTEM image for the AGQD sample, in which no indication of the dislocations due to the large strain is observed, which can be easily seen in a large QD. High-resolution XTEM images for (b) the AGQD sample and (c) the reference sample.

Image of FIG. 3.
FIG. 3.

(a) PL spectra from the reference sample and the AGQD sample measured at room temperature. (b) Excitation-power dependent PL of the AGQG sample. (c) PL spectrum (solid line) with Gaussian fitting curves (dotted lines) from the AGQD sample measured at an excitation power of .

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/content/aip/journal/apl/87/5/10.1063/1.2005385
2005-07-25
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Well-defined excited states of self-assembled InAs∕InAlGaAs quantum dots on InP (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2005385
10.1063/1.2005385
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