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Current–voltage characteristics at room temperature. Squares mark the saturation voltages for different ; circles designate operation points corresponding to the maximum resonant photoresponse at at a given gate bias. Inset shows the photoresponse threshold behavior as a function of applied drain-source current, for different gate voltages (1) ; (2) .
Photoinduced drain-source voltage as a function of gate bias for (a) and (b) sources for different drain-source voltages: (a) drain voltages from the bottom to the top: , , , , , , and ; (b) drain voltages from the bottom to the top: , , , , , and .
Calculations of the photoconductivity signal according to Eqs. (1)–(3) for the frequencies (dashed lines) and (solid lines).
(a) Photoresponse as a function of gate voltage for drain current from (left line) to (right line) with steps; (b) position of the lines maxima as a function applied drain-source current (squares); solid line corresponds to calculation using Eq. (4).
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