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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
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10.1063/1.2005394
/content/aip/journal/apl/87/5/10.1063/1.2005394
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2005394
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current–voltage characteristics at room temperature. Squares mark the saturation voltages for different ; circles designate operation points corresponding to the maximum resonant photoresponse at at a given gate bias. Inset shows the photoresponse threshold behavior as a function of applied drain-source current, for different gate voltages (1) ; (2) .

Image of FIG. 2.
FIG. 2.

Photoinduced drain-source voltage as a function of gate bias for (a) and (b) sources for different drain-source voltages: (a) drain voltages from the bottom to the top: , , , , , , and ; (b) drain voltages from the bottom to the top: , , , , , and .

Image of FIG. 3.
FIG. 3.

Calculations of the photoconductivity signal according to Eqs. (1)–(3) for the frequencies (dashed lines) and (solid lines).

Image of FIG. 4.
FIG. 4.

(a) Photoresponse as a function of gate voltage for drain current from (left line) to (right line) with steps; (b) position of the lines maxima as a function applied drain-source current (squares); solid line corresponds to calculation using Eq. (4).

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/content/aip/journal/apl/87/5/10.1063/1.2005394
2005-07-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2005394
10.1063/1.2005394
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