Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal//Si capacitors”[Appl. Phys. Lett.80, 4858 (2002)]
Click to view
Energy level diagram at flat-band voltage condition for metal//Si capacitor. is the vacuum level and is the bottom of the conduction band; and are valence and conduction band edges in Si substrate; and are the fermi levels in gate and silicon substrate, respectively. is the barrier height at the metal gate interface and is the metal gate work function.
Article metrics loading...
Full text loading...