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Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal//Si capacitors”[Appl. Phys. Lett.80, 4858 (2002)]
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FIG. 3.

Energy level diagram at flat-band voltage condition for metal//Si capacitor. is the vacuum level and is the bottom of the conduction band; and are valence and conduction band edges in Si substrate; and are the fermi levels in gate and silicon substrate, respectively. is the barrier height at the metal gate interface and is the metal gate work function.

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/content/aip/journal/apl/87/5/10.1063/1.2006219
2005-07-27
2014-04-23

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Scitation: Erratum: “A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors”[Appl. Phys. Lett.80, 4858 (2002)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006219
10.1063/1.2006219
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