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Modulation of the work function of silicon gate electrode using thin TaN interlayers
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10.1063/1.2006977
/content/aip/journal/apl/87/5/10.1063/1.2006977
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006977
/content/aip/journal/apl/87/5/10.1063/1.2006977
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/content/aip/journal/apl/87/5/10.1063/1.2006977
2005-07-27
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation of the work function of silicon gate electrode using thin TaN interlayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006977
10.1063/1.2006977
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