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Modulation of the work function of silicon gate electrode using thin TaN interlayers
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10.1063/1.2006977
/content/aip/journal/apl/87/5/10.1063/1.2006977
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006977
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Effect of TaN layer thickness on the work function of devices with -type poly-Si, -type poly-Si, and Ru capping layers. The gate dielectric used in all these devices is .

Image of FIG. 2.
FIG. 2.

Effect of silicon composition on the work function of electrodes deposited on and dielectrics. The silicon content was measured using RBS.

Image of FIG. 3.
FIG. 3.

XPS spectra showing Ta–Si bond formation in stacks with varying TaN layer thickness: (a) , (b) , and (c) . The solid spectra show as-deposited TaN films and the dashed spectra show the same samples after , anneal.

Image of FIG. 4.
FIG. 4.

curves of devices with poly-Si and Poly-Si∕2.0 TaN gate electrodes. The data indicate comparable gate leakage current although the breakdown voltage is somewhat lower for the poly- electrode.

Image of FIG. 5.
FIG. 5.

curve of a device with TaN interlayer showing minimal poly-Si depletion for a poly- gate stack. The inset shows curve of a comparable poly- stack with significant poly-Si depletion.

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/content/aip/journal/apl/87/5/10.1063/1.2006977
2005-07-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation of the work function of silicon gate electrode using thin TaN interlayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006977
10.1063/1.2006977
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