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Effect of TaN layer thickness on the work function of devices with -type poly-Si, -type poly-Si, and Ru capping layers. The gate dielectric used in all these devices is .
Effect of silicon composition on the work function of electrodes deposited on and dielectrics. The silicon content was measured using RBS.
XPS spectra showing Ta–Si bond formation in stacks with varying TaN layer thickness: (a) , (b) , and (c) . The solid spectra show as-deposited TaN films and the dashed spectra show the same samples after , anneal.
curves of devices with poly-Si and Poly-Si∕2.0 TaN gate electrodes. The data indicate comparable gate leakage current although the breakdown voltage is somewhat lower for the poly- electrode.
curve of a device with TaN interlayer showing minimal poly-Si depletion for a poly- gate stack. The inset shows curve of a comparable poly- stack with significant poly-Si depletion.
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