1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction
Rent:
Rent this article for
USD
10.1063/1.2006979
/content/aip/journal/apl/87/5/10.1063/1.2006979
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006979
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Simulated and experimental (measured) peak magnitude plotted against dopant concentration. (b) FWHM of the differential capacitance characteristics ( vs plot) before and after FG anneal plotted against the dopant concentration. The inset shows the energy distribution of the interface trap density that was obtained from conductance measurements for the sample before and after FG annealing. The horizontal axis of the inset shows the trap energy measured from the intrinsic Fermi level .

Image of FIG. 2.
FIG. 2.

Schematic diagram of the different cases simulated: Case (a)—electron acceptor and donor interface traps, each with charge density of , are located throughout the silicon band gap; Case (b)—electron acceptor and donor interface traps, each with charge density of , are each located in the upper and lower half of the band gap, respectively; Case (c)—interface trap distribution similar to Case (a) but with a degraded mobility surface layer of thick where electron and hole mobilities are assumed to be ; Case (d)—interface trap distribution similar to Case (b) but with a degraded mobility surface layer as in Case (c); Case (e)—without any interface traps or degraded mobility surface layer; and Case (f)—similar to Case (e) with an increase in the length of the area plane perpendicular to current flow to from [as in Cases (a) to (e)] to to decrease the sample series resistance. The hole and electron mobilities of the bulk substrate are assumed to be and , respectively. The cross symbol and open circle symbol in the schematic diagrams represent the acceptor and donor interface traps, respectively.

Image of FIG. 3.
FIG. 3.

(a) Simulated peak magnitude plotted against dopant concentration for Case (a) to Case (f) in Fig. 2. (b) Simulated surface band bending, , where and are the surface and intrinsic Fermi level, respectively, plotted against dopant concentration for Case (a) to Case (f) in Fig. 2.

Loading

Article metrics loading...

/content/aip/journal/apl/87/5/10.1063/1.2006979
2005-07-27
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2006979
10.1063/1.2006979
SEARCH_EXPAND_ITEM