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(a) Simulated and experimental (measured) peak magnitude plotted against dopant concentration. (b) FWHM of the differential capacitance characteristics ( vs plot) before and after FG anneal plotted against the dopant concentration. The inset shows the energy distribution of the interface trap density that was obtained from conductance measurements for the sample before and after FG annealing. The horizontal axis of the inset shows the trap energy measured from the intrinsic Fermi level .
Schematic diagram of the different cases simulated: Case (a)—electron acceptor and donor interface traps, each with charge density of , are located throughout the silicon band gap; Case (b)—electron acceptor and donor interface traps, each with charge density of , are each located in the upper and lower half of the band gap, respectively; Case (c)—interface trap distribution similar to Case (a) but with a degraded mobility surface layer of thick where electron and hole mobilities are assumed to be ; Case (d)—interface trap distribution similar to Case (b) but with a degraded mobility surface layer as in Case (c); Case (e)—without any interface traps or degraded mobility surface layer; and Case (f)—similar to Case (e) with an increase in the length of the area plane perpendicular to current flow to from [as in Cases (a) to (e)] to to decrease the sample series resistance. The hole and electron mobilities of the bulk substrate are assumed to be and , respectively. The cross symbol and open circle symbol in the schematic diagrams represent the acceptor and donor interface traps, respectively.
(a) Simulated peak magnitude plotted against dopant concentration for Case (a) to Case (f) in Fig. 2. (b) Simulated surface band bending, , where and are the surface and intrinsic Fermi level, respectively, plotted against dopant concentration for Case (a) to Case (f) in Fig. 2.
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