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Short wavelength intersubband emission from quantum cascade structures
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Image of FIG. 1.
FIG. 1.

Calculated conduction band profile and moduli squared of the relevant wave functions for sample D emitting at under an applied field of . The photon emission occurs between the levels labeled and . The layer sequence is in Å and starting from the injection barrier: 27, 32, 10, 30, 11, 28, 18, 25, 10, 21, 10, 20, 10, 18, 10, 18, 11, 17, 12, 16, 13, 17, 13, 16, 13, 15, 14, 14, 14, 14, 14, 14, 14, 13, 16, 13, 17, 13, 18, 13, where AlSb layers are in bold and Te-doped layers are underlined.

Image of FIG. 2.
FIG. 2.

Normalized emission spectra of different samples at room temperature.

Image of FIG. 3.
FIG. 3.

Electroluminescence spectrum of the sample D for TM (electric field perpendicular to the epitaxial layers) and TE polarizations, showing the different origin of the two peaks.

Image of FIG. 4.
FIG. 4.

Room temperature voltage-current and light-current characteristics of samples B, C, and D.

Image of FIG. 5.
FIG. 5.

Measured room temperature emission linewidth from different samples, as a function of intersubband energy. The thick line is the theorical linewidth calculated with the three contributions: phonon scattering, inhomogeneous broadening, and nonparabolicity effect.


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Table I.

Band parameters used for the modeling of structures.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Short wavelength intersubband emission from InAs∕AlSb quantum cascade structures