Measuring the continuity of diffusion barriers on porous films using -ray energy spectra of escaping positronium
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Positronium three-photon annihilation parameter as a function of positron implantation energy for four samples of porous layers deposited on Si substrates. (a) Uncapped MSQ; (b) 400 nm Nanoglass (NG), capped by 20 nm Ta; (c) same as (b) but capped by 40 nm Ta and then 100 nm Cu; (d) same as (c), but annealed at 300 °C for 1 h in Ar.
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