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-based rectifying contacts to -GaN
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10.1063/1.2007865
/content/aip/journal/apl/87/5/10.1063/1.2007865
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2007865
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM micrographs of as-deposited contacts (top) and after annealing at 700 °C (bottom). The inner circle is the while the outer ring is the ohmic contact.

Image of FIG. 2.
FIG. 2.

Barrier height and reverse breakdown voltage as a function of measurement temperature for as-deposited contacts on -GaN.

Image of FIG. 3.
FIG. 3.

Barrier height and reverse breakdown voltage as a function of annealing temperature for contacts on -GaN.

Image of FIG. 4.
FIG. 4.

AES depth profiles of on GaN both before (top) and annealing at 700 °C (bottom).

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/content/aip/journal/apl/87/5/10.1063/1.2007865
2005-07-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: W2B-based rectifying contacts to n-GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2007865
10.1063/1.2007865
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