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Electrical characterization of band gap states in C-doped films
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10.1063/1.2008376
/content/aip/journal/apl/87/5/10.1063/1.2008376
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2008376
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of C and Ga atoms in the sample.

Image of FIG. 2.
FIG. 2.

Room-temperature frequency dependence of the capacitance of and reference samples. The inset shows the frequency dependence of the conductance at room temperature.

Image of FIG. 3.
FIG. 3.

Depth distribution of effective carrier concentrations in and reference samples.

Image of FIG. 4.
FIG. 4.

DLOS spectra at of and reference samples.

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/content/aip/journal/apl/87/5/10.1063/1.2008376
2005-07-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of band gap states in C-doped TiO2 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2008376
10.1063/1.2008376
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