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Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
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10.1063/1.2008380
/content/aip/journal/apl/87/5/10.1063/1.2008380
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2008380
/content/aip/journal/apl/87/5/10.1063/1.2008380
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/content/aip/journal/apl/87/5/10.1063/1.2008380
2005-07-29
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/5/10.1063/1.2008380
10.1063/1.2008380
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