1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots
Rent:
Rent this article for
USD
10.1063/1.2008365
/content/aip/journal/apl/87/6/10.1063/1.2008365
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/6/10.1063/1.2008365
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of surface morphologies of (a) a smooth GaN with a rms roughness of 2.5 Å and (b) a rough GaN with a rms roughness of 23.5 Å.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of InGaN layers (a) grown on a smooth GaN surface and (b) grown on a rough GaN surface. The inset of (b) shows In-rich QD regions in InGaN grown on a rough GaN surface.

Image of FIG. 3.
FIG. 3.

Room-temperature PL spectra of InGaN layers grown on the smooth and rough GaN layers.

Image of FIG. 4.
FIG. 4.

Temperature-dependent PL spectra of an InGaN layer grown on a rough GaN surface. The inset shows normalized integrated PL intensity as a function of for In-rich QDs related emission (closed circle) and InGaN matrix related emission (open circle).

Loading

Article metrics loading...

/content/aip/journal/apl/87/6/10.1063/1.2008365
2005-08-02
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/6/10.1063/1.2008365
10.1063/1.2008365
SEARCH_EXPAND_ITEM