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AFM images of surface morphologies of (a) a smooth GaN with a rms roughness of 2.5 Å and (b) a rough GaN with a rms roughness of 23.5 Å.
Cross-sectional TEM images of InGaN layers (a) grown on a smooth GaN surface and (b) grown on a rough GaN surface. The inset of (b) shows In-rich QD regions in InGaN grown on a rough GaN surface.
Room-temperature PL spectra of InGaN layers grown on the smooth and rough GaN layers.
Temperature-dependent PL spectra of an InGaN layer grown on a rough GaN surface. The inset shows normalized integrated PL intensity as a function of for In-rich QDs related emission (closed circle) and InGaN matrix related emission (open circle).
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