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A schematic plot of a Sb-assisted single-QW structure with indium-graded intermediate layer. The indium-graded intermediate layer is formed by the gradual change of In composition at the interface of QW and barrier.
RT PL intensity and the spectral FWHM of the simple and Sb-assisted indium-graded single-QW structures as a function of the PL emission wavelength. Solid and open symbols represent the FWHM and the PL peak intensity, respectively. Squares and circles represent the single QWs grown without and with Sb-assisted indium-graded intermediate layer, respectively.
A comparison of the RT PL spectra for the simple and Sb-assisted indium-graded single QWs.
Variable temperature spectra for (a) the simple and (b) the Sb-assisted indium-graded single-QW structures.
The log of the integrated PL intensity plotted as a function of reciprocal temperature for the simple and Sb-assisted indium-graded single QW structures.
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