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(a) A cross-sectional SEM image of a GaAs epilayer selectively grown on a -wide stripe opening fabricated into a 30–nm-thick -covered GaAs(001) substrate. The deposition amount corresponds to . (b) A schematic illustration of the cross section shown in (a) with facet identification. The dashed lines indicate lateral growth over the mask.
(a) An SEM image of a period 1D grating structure selectively grown on an -patterned GaAs(001) substrate. (b) A magnification of (a). The deposition amount of (a) and (b) is about . (c) A bird’s-eye view SEM image of a 1D grating grown under the same growth condition as that employed for (a) except for a thicker growth (). (d) A cross section of (c).
Magnified SEM images of the grating structure shown in (a) Fig. 2(a) and (b) Fig. 2(c) which show the detailed structure of lateral epitaxy near the interface between the GaAs epilayer and the mask. The white dashed lines and white arrows indicate lateral overgrowth. The mask has been chemically removed to provide enhanced contrast.
A schematic illustration of the cross sections of an isosceles triangle shape and a pentagon shape of a GaAs epilayer selectively grown on a 1D stripe-patterned -masked GaAs(001) substrate.
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