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Highly strained multiple quantum-wells for laser applications in the 1200–1300 nm wavelength regime
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10.1063/1.2010615
/content/aip/journal/apl/87/7/10.1063/1.2010615
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/7/10.1063/1.2010615
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence intensity as function of V/III and ratios as indicated. The shaded area roughly outlines a region of unstable growth conditions.

Image of FIG. 2.
FIG. 2.

Measured (a) and simulated (b) HRXRD spectra of test structure with five 6.9 nm QWs. Inset: PL spectrum from the same sample compared to ones with 2–4 QWs.

Image of FIG. 3.
FIG. 3.

Broad-area laser threshold current density (per QW) and as function of the number of QWs.

Image of FIG. 4.
FIG. 4.

Threshold current densities for lasers from the present work (open symbols) as compared to other reported values for QW broad-area lasers at long wavelengths (solid symbols).

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/content/aip/journal/apl/87/7/10.1063/1.2010615
2005-08-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly strained InGaAs∕GaAs multiple quantum-wells for laser applications in the 1200–1300 nm wavelength regime
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/7/10.1063/1.2010615
10.1063/1.2010615
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