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Germanium hut nanostressors on freestanding thin silicon membranes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Top-view scanning electron microscope image of Ge hut clusters on a freestanding -thick Si membrane. The SOI template layer is mechanically supported along the bottom edge of the image. (b) X-ray microdiffraction experiments allow structural studies using the Si (004) reflection from the template layer. The shaded ellipse represents the approximate footprint of the focused x-ray beam.

Image of FIG. 2.
FIG. 2.

Images of the Si (004) x-ray reflections of a freestanding SOI template layer: (a) with Ge hut nanostressors, (b) without Ge. (c) The Si (004) reflection of the handle wafer shows a vertical streak caused by an artifact in the CCD camera used to acquire the diffraction patterns, and a shadow caused by the central stop that is part of the x-ray focusing apparatus (Ref. 11). The direction is horizontal in these images.

Image of FIG. 3.
FIG. 3.

Shift in the angle of the Si (004) reflection as a function of the distance of the x-ray beam from the edge of the membrane. Overall curvature of the freestanding region induced by Ge huts causes the angle of the diffraction spot to vary.

Image of FIG. 4.
FIG. 4.

Predictions of the elastic strain at the interface between a Ge hut and a freestanding Si template layer. The strain due to the curvature of the template layer exceeds the strain due to strain sharing for all template layer thicknesses above .


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Scitation: Germanium hut nanostressors on freestanding thin silicon membranes