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Physical comparison of transistors with polycrystalline silicon and TiN electrodes
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10.1063/1.2011827
/content/aip/journal/apl/87/8/10.1063/1.2011827
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2011827
/content/aip/journal/apl/87/8/10.1063/1.2011827
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/content/aip/journal/apl/87/8/10.1063/1.2011827
2005-08-15
2015-03-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2011827
10.1063/1.2011827
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