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The top-emitting power efficiency of the TEOLEDs with a structure of -Si substrate∕NPB (60 nm)∕ (60 nm)∕Yb ∕Au (15 nm) as a function of the Yb layer thickness. Inset is the transmittance at 530 nm for the Yb∕Au cathode with a Yb layer of varying thickness and with the 15-nm-thick Au layer.
Transmittance spectra as functions of wavelength for various layered cathodes indicated.
The characteristics for the , , , , , and and those for an ITO anode device.
Current efficiency-current density and power efficiency-current density characteristics for the , , and and those for an ITO anode device.
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