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Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates
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Image of FIG. 1.
FIG. 1.

(Color) Schematic illustration of the major steps for fabricating, on flexible plastic substrates, MESFETs that use arrays of single-crystalline GaAs wires with expitaxial -type channel layers, and integrated ohmic contacts of . Anisotropic chemical etching produces wires from a standard (100) GaAs wafer. A printing technique that uses an elastomeric stamp transfers these wires from the wafer to the plastic device substrate in a manner that preserves spatial organization (i.e., ordered arrays). PR denotes photoresist.

Image of FIG. 2.
FIG. 2.

(Color) (a) Schematic geometry of a GaAs wire-based MESFET on a plastic substrate (PU/PET). The source/drain electrodes form ohmic contacts to the layer. The gate electrode forms a Schottky contact to this layer. (b) Optical image of two MESFETs, each of which uses an array of ten GaAs wires. (c) Optical image of a PET sheet with hundreds of devices.

Image of FIG. 3.
FIG. 3.

Electrical response (dc) of a GaAs wire-based MESFET with a channel length of and a gate length of . (a) Typical characteristics at gate voltages between with steps of . (b) Transfer curves of this device at different . (c) Transfer curve plotted as vs at .

Image of FIG. 4.
FIG. 4.

Gate-modulated current-voltage characteristics of a GaAs wire-based MESFET on a flexible PET substrate (a) before bending; (b) after bending to a bend radius of (calculated surface tensile strain of 1.2%); and (c) after relaxing the bent substrate to its flat unbent state. (d) Dependence of , measured at and , on bend radius and strain.


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Scitation: Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates