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(Color) Schematic illustration of the major steps for fabricating, on flexible plastic substrates, MESFETs that use arrays of single-crystalline GaAs wires with expitaxial -type channel layers, and integrated ohmic contacts of . Anisotropic chemical etching produces wires from a standard (100) GaAs wafer. A printing technique that uses an elastomeric stamp transfers these wires from the wafer to the plastic device substrate in a manner that preserves spatial organization (i.e., ordered arrays). PR denotes photoresist.
(Color) (a) Schematic geometry of a GaAs wire-based MESFET on a plastic substrate (PU/PET). The source/drain electrodes form ohmic contacts to the layer. The gate electrode forms a Schottky contact to this layer. (b) Optical image of two MESFETs, each of which uses an array of ten GaAs wires. (c) Optical image of a PET sheet with hundreds of devices.
Electrical response (dc) of a GaAs wire-based MESFET with a channel length of and a gate length of . (a) Typical characteristics at gate voltages between with steps of . (b) Transfer curves of this device at different . (c) Transfer curve plotted as vs at .
Gate-modulated current-voltage characteristics of a GaAs wire-based MESFET on a flexible PET substrate (a) before bending; (b) after bending to a bend radius of (calculated surface tensile strain of 1.2%); and (c) after relaxing the bent substrate to its flat unbent state. (d) Dependence of , measured at and , on bend radius and strain.
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