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Structure and electronic properties of dysprosium-silicide nanowires on vicinal Si(001)
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10.1063/1.2032620
/content/aip/journal/apl/87/8/10.1063/1.2032620
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2032620
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

STM images of the two different nanowire types developing from 1 Å Dy on planar Si(001) after annealing at (a) 500 and (b) 550 °C.

Image of FIG. 2.
FIG. 2.

STM images of the different nanowire types formed from 1 Å Dy on vicinal Si(001) with a misorientation of 4° in direction after annealing at (a) 500 and (b) 600 °C.

Image of FIG. 3.
FIG. 3.

High resolution filled states STM images of the thinner nanowires on [(a), (b)] a vicinal and (c) a planar substrate, taken at (a) 0.3, (b) 2.0, and (c) 1.0 V tunneling voltage. Each image has a width and height of 35 Å.

Image of FIG. 4.
FIG. 4.

Series of ARPES spectra for the thinner wire type on vicinal Si(001) showing the dispersion parallel to the wires. The nondispersing peak at 4.7 eV binding energy stems from the Dy emission (see Ref. 16).

Image of FIG. 5.
FIG. 5.

(Color online) Energy dispersion derived from ARPES spectra recorded at 41 eV photon energy. Results from thin nanowires are shown in the first row [(a), (b)], and those from broad nanowires below [(c), (d)]. (a) and (c) show the dispersion parallel to the wires, while (b) and (d) were recorded perpendicular to the wires.

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/content/aip/journal/apl/87/8/10.1063/1.2032620
2005-08-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure and electronic properties of dysprosium-silicide nanowires on vicinal Si(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2032620
10.1063/1.2032620
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