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STM images of the two different nanowire types developing from 1 Å Dy on planar Si(001) after annealing at (a) 500 and (b) 550 °C.
STM images of the different nanowire types formed from 1 Å Dy on vicinal Si(001) with a misorientation of 4° in direction after annealing at (a) 500 and (b) 600 °C.
High resolution filled states STM images of the thinner nanowires on [(a), (b)] a vicinal and (c) a planar substrate, taken at (a) 0.3, (b) 2.0, and (c) 1.0 V tunneling voltage. Each image has a width and height of 35 Å.
Series of ARPES spectra for the thinner wire type on vicinal Si(001) showing the dispersion parallel to the wires. The nondispersing peak at 4.7 eV binding energy stems from the Dy emission (see Ref. 16).
(Color online) Energy dispersion derived from ARPES spectra recorded at 41 eV photon energy. Results from thin nanowires are shown in the first row [(a), (b)], and those from broad nanowires below [(c), (d)]. (a) and (c) show the dispersion parallel to the wires, while (b) and (d) were recorded perpendicular to the wires.
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