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I-V characteristics and biasing from 5–29 K in 4 K steps; (a) forward bias : current injection from EuS into GaAs. (b) Reverse bias : current injection from GaAs into EuS.
The prefactor to the exponent (see Eq. (1)) vs temperature [injection from EuS into GaAs, Fig. 1(a)] depicts a sharp rise in the current due to the lowering of the barrier height for the spin up electrons, due to the Zeeman splitting of the EuS conduction band. Also shown is the expected field emission data for the equivalent non-magnetic barrier.
Normalized change in the barrier height due to the Zeeman splitting of the EuS conduction band with Brillouin fit. The estimated size of the half-Zeeman splitting [injection from EuS into GaAs Fig. 1(a)] is . Also shown on an inverted scale, is the resistance of the control EuS film up to 30 K.
PDE, as defined in the text as a function of bias at HJ.
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