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Band structure of an IBSC, showing transitions, energy gaps, and quasi-Fermi levels.
Epitaxial layer structure of the IBSC based on InAs quantum dots embedded in GaAs.
Quantum efficiency of the quantum dot-based IBSCs. “R” labels the GaAs reference, “A” is the sample with both QDs and -doped layers while “B” is the sample with QDs but lacking the -doped layers.
Electroluminescence of the quantum dot IBSCs. “R” labels the GaAs reference, “A” the sample with both QDs and -doped layers, and “B” the sample with QDs but with the -doped layer omitted. The numbers “1” to “4” identify the different peaks.
Experimental data for the determination of .
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