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Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells
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10.1063/1.2034090
/content/aip/journal/apl/87/8/10.1063/1.2034090
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2034090

Figures

Image of FIG. 1.
FIG. 1.

Band structure of an IBSC, showing transitions, energy gaps, and quasi-Fermi levels.

Image of FIG. 2.
FIG. 2.

Epitaxial layer structure of the IBSC based on InAs quantum dots embedded in GaAs.

Image of FIG. 3.
FIG. 3.

Quantum efficiency of the quantum dot-based IBSCs. “R” labels the GaAs reference, “A” is the sample with both QDs and -doped layers while “B” is the sample with QDs but lacking the -doped layers.

Image of FIG. 4.
FIG. 4.

Electroluminescence of the quantum dot IBSCs. “R” labels the GaAs reference, “A” the sample with both QDs and -doped layers, and “B” the sample with QDs but with the -doped layer omitted. The numbers “1” to “4” identify the different peaks.

Tables

Generic image for table
Table I.

Experimental data for the determination of .

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/content/aip/journal/apl/87/8/10.1063/1.2034090
2005-08-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2034090
10.1063/1.2034090
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