1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
Rent:
Rent this article for
USD
10.1063/1.2034118
/content/aip/journal/apl/87/8/10.1063/1.2034118
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2034118

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of strain compensating technique for fabricating self-assembled InAs QWRs in the system.

Image of FIG. 2.
FIG. 2.

Typical AFM images of InAs QWRs grown on the matrix in (a) sample 1 and (b) sample 2. The profile curves along the [110] direction are also shown.

Image of FIG. 3.
FIG. 3.

(a, c) Dark field cross-sectional TEM images of InAs QWRs grown on the matrix in sample 1 and sample 2, respectively, along [1–10]; and (b, d) corresponding images along the [110] of InAs QWRs.

Image of FIG. 4.
FIG. 4.

Experimental (004) XRD rocking curves of sample 1 and sample 2.

Tables

Generic image for table
Table I.

Statistics of QWRs in samples 1 and 2.

Loading

Article metrics loading...

/content/aip/journal/apl/87/8/10.1063/1.2034118
2005-08-18
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/8/10.1063/1.2034118
10.1063/1.2034118
SEARCH_EXPAND_ITEM