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Plasma hydrogenation of strained heterostructure for layer transfer without ion implantation
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10.1063/1.2032602
/content/aip/journal/apl/87/9/10.1063/1.2032602
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2032602
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray scans around the Si(004) diffraction peak, obtained from as-grown MBE Si and the corresponding Bede RADS auto-fit to the data. The inset shows the out-of-plane strain as a function of depth.

Image of FIG. 2.
FIG. 2.

Hydrogen ERD spectra from a hydrogenated MBE sample (with a strained layer buried at a depth of 190 nm) and a hydrogenated control Si sample (without the strained layer). The ERD spectra have been normalized by subtracting the nonhydrogenated spectrum.

Image of FIG. 3.
FIG. 3.

Infrared absorption spectra from the hydrogenated MBE sample (with a strained layer) and the hydrogenated control Si sample (without a strained layer).

Image of FIG. 4.
FIG. 4.

TEM micrographs obtained from (a) the hydrogenated control Si sample (with a strained layer), and (b) the hydrogenated MBE sample (with a strained layer).

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/content/aip/journal/apl/87/9/10.1063/1.2032602
2005-08-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2032602
10.1063/1.2032602
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