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Growth of high-quality ZnMgO epilayers and quantum well structures by radical-source molecular-beam epitaxy on sapphire
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10.1063/1.2034113
/content/aip/journal/apl/87/9/10.1063/1.2034113
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2034113
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) RHEED patterns taken along (11–20) azimuth for ZnMgO epilayers grown at and different temperatures: (a) , thick, arrows indicate polycrystalline rings; (b) , thick, arrows indicate facet features; (c) same as (b), but after annealing at for and cooling down to room temperature, arrows indicate reconstruction; (d) AFM topography image of sample (c), the scan size is .

Image of FIG. 2.
FIG. 2.

ZnMgO epilayers grown at . The layer thickness is about . (a) BPR, (b) -lattice constant, and (c) room temperature band gap versus Mg content. Inset: optical transmission spectra for (right), 0.40 (left).

Image of FIG. 3.
FIG. 3.

RHEED specular-beam intensity oscillations recorded after annealing at each interface during growth of a QW structure (, bottom epilayer thickness: , ZnO QW thickness: ).

Image of FIG. 4.
FIG. 4.

PL spectra of QW structures measured at liquid-helium (a)–(c) and room (d) temperature excited with the line of an laser. The high-energy bands represent barrier emission, not observed for the structure, as the excitation is below the ternary band-edge.

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/content/aip/journal/apl/87/9/10.1063/1.2034113
2005-08-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of high-quality ZnMgO epilayers and ZnO∕ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2034113
10.1063/1.2034113
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