Full text loading...
(a) Device heterostructure showing the doping profile, growth temperatures, and layer thicknesses of the top and bottom mirrors, cavity, and active region; (b) room-temperature reflectivity and photoluminescence (PL) spectra of the spin-VCSEL heterostructure prior to fabrication. A offset between the reflectivity dip and PL peak wavelengths at was introduced to optimize the spin-VCSEL performance at ; (c) image of a fabricated spin-VCSEL with ground-signal-ground contacts.
(a) Linear-polarization-resolved electroluminescence spectra [full width at half-maximum, ] of the spin-VCSEL at ; (b) light vs current plots of a typical VCSEL having an aperture diameter ( outer diameter) obtained at and .
(a) Field dependence of the degree of circular polarization demonstrating helicity modulation of the elliptically polarized emission at using applied magnetic fields; (b) temperature dependence of the degree of circular polarization demonstrating spin injection and device operation from . Inset shows the in-plane, field-cooled magnetization vs temperature for the low-temperature-annealed laser heterostructure.
Article metrics loading...