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(a) SEM image of GaAs nanowires. Inset shows image of nanowires from the top; (b) SEM image of nanowires after the growth of AlGaAs.
AlGaAs growth time dependence of nanowire thickness. Initial GaAs nanowire diameter was . Nanowire diameter increased with AlGaAs growth time.
PL spectra of core-shell nanowires (NWs), bare GaAs nanowires, and reference semi-insulating GaAs substrate. Intensity of core-shell nanowires is about 20 times larger that of bare GaAs nanowires.
Fabrication processes for AlGaAs nanotubes. Starting from core-shell nanowires, top AlGaAs was removed by dry etching, followed by preferential wet etching to remove GaAs core.
(a) SEM images of freestanding AlGaAs nanotubes. Their inner and outer diameters are 100 and , respectively. (b) Top view SEM image of AlGaAs nanotube.
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