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Fabrication and characterization of freestanding core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
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10.1063/1.2035332
/content/aip/journal/apl/87/9/10.1063/1.2035332
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2035332
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of GaAs nanowires. Inset shows image of nanowires from the top; (b) SEM image of nanowires after the growth of AlGaAs.

Image of FIG. 2.
FIG. 2.

AlGaAs growth time dependence of nanowire thickness. Initial GaAs nanowire diameter was . Nanowire diameter increased with AlGaAs growth time.

Image of FIG. 3.
FIG. 3.

PL spectra of core-shell nanowires (NWs), bare GaAs nanowires, and reference semi-insulating GaAs substrate. Intensity of core-shell nanowires is about 20 times larger that of bare GaAs nanowires.

Image of FIG. 4.
FIG. 4.

Fabrication processes for AlGaAs nanotubes. Starting from core-shell nanowires, top AlGaAs was removed by dry etching, followed by preferential wet etching to remove GaAs core.

Image of FIG. 5.
FIG. 5.

(a) SEM images of freestanding AlGaAs nanotubes. Their inner and outer diameters are 100 and , respectively. (b) Top view SEM image of AlGaAs nanotube.

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/content/aip/journal/apl/87/9/10.1063/1.2035332
2005-08-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2035332
10.1063/1.2035332
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