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quantum-well lasers using two-step and nitride passivation growth
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10.1063/1.2037857
/content/aip/journal/apl/87/9/10.1063/1.2037857
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2037857
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of SQW with various growth sequences: (a) On GaAs, (b) on cladding layer, and (c) on cladding layer grown in two steps.

Image of FIG. 2.
FIG. 2.

SIMS profiles of SQW directly grown on GaAs buffer and cladding layer.

Image of FIG. 3.
FIG. 3.

SIMS profiles of InGaAsN SQW grown directly on cladding layer with and without nitride passivation.

Image of FIG. 4.
FIG. 4.

PL spectra of InGaAsN SQW grown on: (a) GaAs directly and (b) cladding layer layer with nitride passivation.

Image of FIG. 5.
FIG. 5.

curves of long InGaAsN QWs lasers grown with nitride passivation and two-step growth, respectively. The inset shows their lasing spectra.

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/content/aip/journal/apl/87/9/10.1063/1.2037857
2005-08-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaAsN∕GaAs quantum-well lasers using two-step and nitride passivation growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/9/10.1063/1.2037857
10.1063/1.2037857
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