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XRD scan showing the and reflection and normalized rocking curves of the , and reflections.
Cross-sectional bright-field TEM micrograph of a thick GaN film on imaged along . The darker lines and shadings can be identified as strain contrasts.
Cross-sectional bright-field TEM micrograph imaged along showing basal plane stacking faults (white arrows) as the dominant defect type. The surface exhibits several high steps (black arrow).
PL spectrum of an -plane GaN thin film taken at a temperature of . The peaks at 3.378 and correspond to a DAP transition and to a donor-bound exciton , respectively. The inset shows the spectrum on a logarithmic scale.
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