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High-quality -plane GaN thin films deposited on by ion-beam-assisted molecular-beam epitaxy
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10.1063/1.2159100
/content/aip/journal/apl/88/1/10.1063/1.2159100
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2159100
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD scan showing the and reflection and normalized rocking curves of the , and reflections.

Image of FIG. 2.
FIG. 2.

Cross-sectional bright-field TEM micrograph of a thick GaN film on imaged along . The darker lines and shadings can be identified as strain contrasts.

Image of FIG. 3.
FIG. 3.

Cross-sectional bright-field TEM micrograph imaged along showing basal plane stacking faults (white arrows) as the dominant defect type. The surface exhibits several high steps (black arrow).

Image of FIG. 4.
FIG. 4.

PL spectrum of an -plane GaN thin film taken at a temperature of . The peaks at 3.378 and correspond to a DAP transition and to a donor-bound exciton , respectively. The inset shows the spectrum on a logarithmic scale.

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/content/aip/journal/apl/88/1/10.1063/1.2159100
2006-01-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2159100
10.1063/1.2159100
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